THERMAL EXPANSlON OF V3Si
- 1 August 1978
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 39 (C6) , C6-408
- https://doi.org/10.1051/jphyscol:19786183
Abstract
Measurements of the thermal expansion coefficient of five single crystals of V3Si in the temperature range 4.2 - 293 K fail to reveal the unusual negative values just above Tc reported by Smith et al. for polycrystalline samples. In two of the samples exhibiting a lattice transformation at low temperature associated anomalies are found to extend up to at least 60 KKeywords
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