Near-surface electrical effects of oxidation and hydrogenation in silicon
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 277-280
- https://doi.org/10.1016/0921-5107(89)90257-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Calculation of the electron-beam-induced current (EBIC) at a Schottky contact and comparison with Au/n-Ge diodesPhilosophical Magazine Part B, 1989
- Hydrogen in Crystalline SemiconductorsAnnual Review of Materials Science, 1988
- Defects in single-crystal silicon induced by hydrogenationPhysical Review B, 1987
- Solubility and Diffusion Coefficient of Oxygen in SiliconJapanese Journal of Applied Physics, 1985
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978