Relative sensitivity factors for positive atomic and molecular ions sputtered from Si and GaAs

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Abstract
Secondary ion mass spectrometry (SIMS) relative sensitivity factors (RSFs) are tabulated for atomic and molecular ions sputtered from Si and GaAs matrices using oxygen primary ions and positive secondary ions. The RSFs are inversely proportional to the secondary ion yields. RSFs are plotted versus atomic number to establish patterns and trends. The data for molecular ions aid in the resolution of certain mass interferences and also have implications for the SIMS ionization process.

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