Efficient generation at 421 nm by resonantly enhanced doubling of GaAlAs laser diode array emission
- 17 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (3) , 218-220
- https://doi.org/10.1063/1.101912
Abstract
The 842-nm diffraction-limited emission from an injection-locked laser diode array was frequency doubled using a monolithic spherical-mirror KNbO3 crystal cavity. Maximum unidirectional external 421 nm power of 24 mW was generated with 167 mW of pump power. Maximum total internal second-harmonic power and conversion efficiency of 64 mW and 45% were obtained. Effects of heating in the crystal are described.Keywords
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