Properties of PbTe and Pb1−xSnxTe films prepared by metalorganic chemical vapor deposition
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 468-474
- https://doi.org/10.1016/0022-0248(86)90338-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- PbSnTe multiple quantum well lasers for pulsed operation at 6 μm up to 204 KApplied Physics Letters, 1985
- Direct determination of elastic strain in strained-layer superlattices by high-angle x-ray interferencesApplied Physics Letters, 1985
- Anomalous transport in PbTe doping superlatticesApplied Physics Letters, 1985
- Semimetallic Hall properties of PbTe-SnTe superlatticeJournal of Applied Physics, 1985
- Sn diffusion effects on x-ray diffraction patterns of Pb1−xSnxTe–PbSeyTe1−y superlatticesJournal of Applied Physics, 1985
- Stripe geometry lead-telluride diode lasers grown by molecular beam epitaxyJournal of Applied Physics, 1984
- Mesa-stripe Pb1-xSnxSe tunable diode lasersIEEE Journal of Quantum Electronics, 1983
- Optimal design of Pb1-xSnxTe double heterostructure injection lasersIEEE Journal of Quantum Electronics, 1983
- The Use of Metalorganics in the Preparation of Semiconductor Materials: VI . Formation of IV–VI Lead and Tin SaltsJournal of the Electrochemical Society, 1975
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969