Vacancies in polycrystalline diamond films
- 15 January 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (4) , 1979-1984
- https://doi.org/10.1103/physrevb.53.1979
Abstract
Positron-lifetime spectroscopy has been performed in concert with photoluminescence to investigate vacancy-related point defects in polycrystalline diamond films grown by chemical vapor deposition (CVD). Undoped films extensively contain vacancies including monovacancies, divacancies, and vacancy clusters. They are distributed inhomogeneously throughout the films with some crystallites nearly free of vacancies while others contain high concentrations (≳ 50 ppm). However, boron doping can dramatically reduce the vacancy content in diamond films. The vacancy-related defects are stable up to 1100 °C. The different luminescence peaks can be related to various types of vacancies present in CVD diamond. © 1996 The American Physical Society.Keywords
This publication has 18 references indexed in Scilit:
- Positron lifetime investigations of diamond filmsDiamond and Related Materials, 1993
- Native Paramagnetic Defects in Diamond FilmsMaterials Science Forum, 1993
- Preferential incorporation of defects in monocrystalline diamond filmsDiamond and Related Materials, 1993
- Characterization of Diamond Films by Means of a Pulsed Positron BeamJapanese Journal of Applied Physics, 1992
- Defect characterization in diamonds by means of positron annihilationDiamond and Related Materials, 1992
- Hydrogen binding and diffusion in diamondJournal of Materials Research, 1992
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow PositronsJapanese Journal of Applied Physics, 1990
- Mechanism of self-diffusion in diamondPhysical Review Letters, 1988
- Program system for analysing positron lifetime spectra and angular correlation curvesComputer Physics Communications, 1981
- Positron studies of condensed matterAdvances in Physics, 1973