Low-pressure etching of GaAs with multipolar plasma confinement
- 15 May 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (10) , 4885-4888
- https://doi.org/10.1063/1.338958
Abstract
Anisotropic etching of GaAs with 100–400 eV ion radiation energies is reported in a low-pressure, magnetically confined multipolar plasma. Etch rates ∼0.5 μm/min and excellent surface texture are obtained in SiCl4, CFCl3, and CF2Cl2 at pressures of 0.5–2.0 mTorr. Schottky barrier measurements show low substrate damage for ion energies ≤200 eV, increasing sharply for higher energies. Survey spectra using x-ray photoelectron spectroscopy show that chlorine surface contamination also increases with ion radiation energy.This publication has 8 references indexed in Scilit:
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