Infrared Reflectivity of Heavily Doped Low-Mobility Semiconductors. I. GaAs
- 1 December 1966
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (13) , 4743-4745
- https://doi.org/10.1063/1.1708129
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Effective Mass of Holes in GaAsPhysica Status Solidi (b), 1966
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957