FirstT=2Level inP32

The first $J^{\pi }=0^{+}$, $T=2\mathrm{}$ level in ${}_{}{}^{32}{}_{}{}^{}\mathrm{P}$ has been found at an excitation 5073.4±1.5 keV using the reaction ${}_{}{}^{30}{}_{}{}^{}\mathrm{Si}({}_{}{}^3{}_{}{}^{}\mathrm{He}, p\gamma ){}_{}{}^{32}{}_{}{}^{}\mathrm{P}$ at 8.02-MeV incident energy. The angular distribution has been analyzed with the distorted-wave Born-approximation formalism. Using a Ge(Li) detector, the $\gamma$-decay scheme of this level has been established. The following branching ratios to the ground state, the 1.149-, and the 2.230-MeV levels are, respectively: (5.3±0.9), (84.0±8.5), and (10.7±1.4)%. This is compared with the decay scheme of its analog state in ${}_{}{}^{32}{}_{}{}^{}\mathrm{S}$.