The influence of preparation conditions and small amounts of SnSe on annihilation characteristics of As-Se glass
- 16 August 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 60 (2) , K185-K189
- https://doi.org/10.1002/pssa.2210600258
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Positron annihilation in point defects of the glassy As-Se systemPhysica Status Solidi (a), 1978
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- The study of defects in crystals by positron annihilationApplied Physics A, 1974
- On the nature of recombination centers in vitreous arsenic selenideJournal of Non-Crystalline Solids, 1972