Structure study of Au–Si interface by MeV ion scattering

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Abstract
An application of the MeV ion backscattering/channeling technique to the Au–Si interface problem is described in this report. It is directly shown that at room temperature both Si(100) and Si(111) surfaces interact with deposited Au atoms abruptly if the Au film thickness exceeds a critical value of ∠4 monolayer (ML). The interface structure is similar in both cases and consists of ∠2 ML of strained Si and ∠10 ML of disordered (amorphous) silicide layer. When the substrate temperature is kept at 550°C during Au-film deposition, the interfacial reaction occurs if the average Au-film thickness reaches 1 ML in the Au–Si(111) system and ∠2 ML in the Au–Si(100) system. This is a suggestion of interaction between Si dangling bonds and the first few monolayers of Au-film.

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