TEM investigation of the dependence of structural defects on prelayer formation in GaAs-on-Si thin films
- 1 December 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 336 (1-2) , 96-99
- https://doi.org/10.1016/s0040-6090(98)01217-6
Abstract
No abstract availableKeywords
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