Steady-state thermally annealed GaAs with room-temperature-implanted Si
- 1 May 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9) , 749-751
- https://doi.org/10.1063/1.91637
Abstract
Semi-insulating Cr-doped single-crystal GaAs samples were implanted at room temperature with 300-keV Si ions in the dose range of (0.17–2.0)×1015 cm−2 and were subsequently steady-state annealed at 900 and 950 °C for 30 min in a H2 ambient with a Si3N4 coating. Differential Hall measurements showed that an upper threshold of about 2×1018/cm3 exists for the free-electron concentration. The as-implanted atomic-Si profile measured by SIMS follows the theoretical prediction, but is altered during annealing. The Cr distribution also changes, and a band of dislocation loops ∼2–3 kÅ wide is revealed by cross-sectional TEM at a mean depth of Rp∼3 kÅ. Incomplete electrical activation of the Si is shown to be the primary cause for the effect.Keywords
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