QUANTUM WELLS IN OPTOELECTRONICS: GaAs/GaAlAs graded index separate confinement single quantum well single-mode waveguide electroabsorption light modulator
- 1 January 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings J Optoelectronics
- Vol. 138 (5) , 313-318
- https://doi.org/10.1049/ip-j.1991.0055
Abstract
A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 Å and device length of 700 μm, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 Å, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 Å of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to −7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV.Keywords
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