WSi2gate MOS devices

• 1 January 1979
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1979.189656

Abstract

Keywords

• SILICON
• CONDUCTIVITY
• ANNEALING
• TEMPERATURE
• SPUTTERING
• CAPACITANCE-VOLTAGE CHARACTERISTICS
• VOLTAGE
• CHEMICALS
• FABRICATION
• OXIDATION