Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopy
- 24 June 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 66 (25) , 3257-3260
- https://doi.org/10.1103/physrevlett.66.3257
Abstract
The formation of disordered regions is observed on the Ga(111)c2×8 surface, at temperatures in the range 150–350 °C. The disorder occurs by the diffusion of surface adatoms in the 〈011¯〉 directions. The disordered regions form at domain boundaries, and grow continuously with temperature until the entire surface becomes disordered at 300 °C. We argue that this phase transition is an example of premelting in two dimensions, i.e., ‘‘edge melting.’’This publication has 20 references indexed in Scilit:
- Surface phase transitions on clean Ge(111) studied by spectroscopic ellipsometryPhysical Review B, 1990
- Phase transitions on the Ge(111) and Si(111) surfaces from core-level studiesPhysical Review B, 1990
- High-temperature scanning tunneling microscopeJournal of Vacuum Science & Technology A, 1990
- He diffraction study of the structural phase transition on the Ge(111) surface at 550 KThe Journal of Chemical Physics, 1989
- Phase Diagram of the Lattice Gas Model for the (111) Surfaces of Si and Ge –A Hard Hexagon Model with Extended Range Interactions–Journal of the Physics Society Japan, 1989
- Lattice Gas Model of the (111) Surface of GeJournal of the Physics Society Japan, 1989
- Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopyPhysical Review B, 1989
- Core-level study of the phase transition on the Ge(111)-c(2×8) surfacePhysical Review B, 1988
- A LEED study of Ge(111); a high-temperature incommensurate structureSurface Science, 1985
- Tunneling Images of Germanium Surface Reconstructions and Phase BoundariesPhysical Review Letters, 1985