Study of the exciton selection rules of layer-type semiconductor GaSe by thermoreflectance
- 1 April 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 12 (7) , 649-651
- https://doi.org/10.1016/0038-1098(73)90305-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Temperature-modulated reflectance of GaSe at the ground state exciton linePhysica Status Solidi (b), 1971
- Band Structures and Optical Properties of Semiconducting Layer Compounds GaS and GaSeJournal of the Physics Society Japan, 1968
- Band structure and optical properties of graphite and of the layer compounds GaS and GaSeIl Nuovo Cimento B (1971-1996), 1967
- The optical absorption edge in layer structuresJournal of Physics and Chemistry of Solids, 1964
- Semiconductors of the type AIIIBVIJournal of Physics and Chemistry of Solids, 1959