Effect of Interstitial Li on the Density of Si
- 1 November 1961
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 35 (5) , 1803-1808
- https://doi.org/10.1063/1.1732148
Abstract
The densities of silicon and of silicon containing interstitial Li+ were determined. There is a volume expansion of 4.7×10—24 cm3 per Li+ dissolved in silicon. This expansion is interpreted as arising from the Coulombic repulsion between the Li+ and the partially shielded Si4+ cores. Calculations based on a simple model of the charge distribution in silicon are in accord with this interpretation. The density change accompanying the room temperature deionization and aggregation of the lithium was also measured. During the initial stages of this process, the volume increases linearly by 6.0×10—24 cm3 per lithium transferred from the ionized to the deionized state. This expansion is interpreted as arising from overlap repulsive forces between the Si and aggregates of neutral lithium in neighboring interstitial sites. Considerations based on the size of Li0 in these aggregates and the free energy change for the deionization and aggregation process support this interpretation. A final nonlinear region in the observed volume expansion is interpreted as being due to the precipitation of lithium metal so as to leave itself and the silicon strain free.Keywords
This publication has 12 references indexed in Scilit:
- Theory of solubility of interstitial impurities in germanium and siliconJournal of Physics and Chemistry of Solids, 1960
- Restricted and unrestricted hartree-fock calculations for atomic lithiumAnnals of Physics, 1960
- Work function and emission studies on clean silicon surfacesJournal of Physics and Chemistry of Solids, 1959
- The effect of ion pair and ion triplet formation on the solubility of lithium in germanium—effect of gallium and zincJournal of Physics and Chemistry of Solids, 1958
- Solubility of Lithium in germaniumJournal of Physics and Chemistry of Solids, 1957
- Application of the Orthogonalized Plane-Wave Method to Silicon CrystalPhysical Review B, 1956
- Precision Determination of Lattice Constants with a Geiger-Counter X-Ray DiffractometerPhysical Review B, 1955
- Densitometric and Electrical Investigation of Boron in SiliconPhysical Review B, 1955
- Formulas and Numerical Tables for Overlap IntegralsThe Journal of Chemical Physics, 1949
- Atomic Wave Functions for Two Stages of Ionization of SiliconPhysical Review B, 1936