A simple method for preparing "Sodium-free" thermally grown silicon dioxide on silicon

1 January 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (12) , 2193-2195
https://doi.org/10.1109/PROC.1967.6124

Abstract

A simple, reproducible MOS process requiring few steps and no elaborate equipment was developed. A surface charge density of 1 × 10¹¹/cm²was obtained for 1000-Å thermal oxide on ⟨100⟩ 10-ohm ċ cm p-type silicon chips after mounting and bonding. Stability results after temperature-bias test (3 min at 300°C with a field of 10⁶V/cm) exhibited a flatband voltage shift of only -0.50 V.

Keywords

SILICON COMPOUNDS
ELECTRON MOBILITY
CHARGE CARRIER PROCESSES
THERMAL STRESSES
VELOCITY MEASUREMENT
DIODES
ELECTRON DEVICES
DOPING
BONDING
THERMAL STABILITY