PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors
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- 7 October 2005
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 310 (5745) , 86-89
- https://doi.org/10.1126/science.1116703
Abstract
Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically “activated” to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.Keywords
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