Summation of Gaussians for ion-implantation profile control
- 20 March 1969
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 5 (6) , 111-112
- https://doi.org/10.1049/el:19690084
Abstract
Conditions are given under which ions of a single energy produce doping profiles close to Gaussian. Methods of Gaussian summation are discussed. A computer program is described which selects optimum energies for fit to predetermined profiles. Energy-dose data are given for a uniform profile of various dopants in silicon.Keywords
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