On the band gap of indium nitride
- 6 May 2003
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 237 (2) , R1-R2
- https://doi.org/10.1002/pssb.200301823
Abstract
The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct‐gap II–VI and III–V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showing a band gap of 0.7 eV.Keywords
This publication has 11 references indexed in Scilit:
- Comment on ?Band Gap of InN and In-Rich InxGa1?xN Alloys (0.36 < x < 1)?Physica Status Solidi (b), 2002
- Optical bandgap energy of wurtzite InNApplied Physics Letters, 2002
- Unusual properties of the fundamental band gap of InNApplied Physics Letters, 2002
- Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)Physica Status Solidi (b), 2002
- Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBEPhysica Status Solidi (b), 2001
- Physical properties of InN with the band gap energy of 1.1 eVJournal of Crystal Growth, 2001
- Nitride thin films grown by pulsed laser deposition assisted by atomic nitrogen beamThin Solid Films, 2000
- ‘‘Universal’’ conduction-band structure in some common semiconductor compoundsPhysical Review Letters, 1990
- Infrared absorption in indium nitrideJournal of Applied Physics, 1986
- Electron Transport in Compound SemiconductorsPublished by Springer Nature ,1980