A comparison of commercial sources of epitaxial material for GaN HFETs fabrication

• 25 July 2001
• journal article
• Published by Elsevier in Journal of Crystal Growth
• Vol. 230  (3-4) , 569-572
• https://doi.org/10.1016/s0022-0248(01)01289-1

Abstract

Keywords

• A3. EPITAXY
• B1. GALLIUM COMPOUNDS
• B1. NITRIDES
• B3. HETEROSTRUCTURE FIELD EFFECT TRANSISTORS