Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects
- 13 May 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (10) , 873-875
- https://doi.org/10.1049/el:19930583
Abstract
The Letter reports ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process for computer interconnects. Uncoated 350 μm-long buried heterostructure lasers show an extremely low laser threshold of 0.8 mA and a high slope efficiency of 0.41 mW/mA per facet both measured CW at RT, and a high relaxation oscillation frequency of 5.1 GHz at a bias current of 4 mA.Keywords
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