High-frequency characterization of sub-0.25-/spl mu/m fully depleted silicon-on-insulator MOSFETs
- 1 October 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (10) , 497-499
- https://doi.org/10.1109/55.870613
Abstract
A cutoff frequency, f/sub T/, of 85 GHz was measured on a fully-depleted silicon-on-insulator (FDSOI) n-MOSFET with a gate length of 0.15 /spl mu/m. The p-MOSFET with 0.22-/spl mu/m gate length has an f/sub T/ of 42 GHz. The high-frequency equivalent circuits were derived from scattering parameters for MOSFETs with various gate lengths. The effects of gate length and other device parameters on the performance of FDSOI MOSFETs at RF are discussed.Keywords
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