Diffusion Pipes in Silicon NPN Structures

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Abstract
Diffusion pipes in silicon NPN structures were investigated both by electrical measurements and by microsectioning. It was found that certain crystalline defects, specifically stacking faults and edge dislocations, can act as sites for the formation of such pipes. The presence of gold doping at these lattice defects greatly increases the incidence of pipes, apparently by offering a path of enhanced diffusivity for phosphorus from the emitter.

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