Nano-Tubes in GaN
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Structural characterization of bulk GaN crystals grown under high hydrostatic pressureJournal of Electronic Materials, 1996
- Micropipes in silicon carbide: Microstructure of the wallPhysica Status Solidi (b), 1996
- Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiCJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Structural Defects in Heteroepitaxial and Homoepitaxial GaNMRS Proceedings, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Large diameter 6H-SiC for microwave device applicationsJournal of Crystal Growth, 1994
- Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxyApplied Physics Letters, 1993
- Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin filmsApplied Physics Letters, 1993
- Growth and Doping of GaN Films by ECR-Assisted MBEMRS Proceedings, 1992
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire SubstratesJapanese Journal of Applied Physics, 1988