Capabilities of Mercuric Iodide as a Room Temperature X-Ray Detector
- 1 January 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 23 (1) , 102-111
- https://doi.org/10.1109/tns.1976.4328223
Abstract
Measurement results obtained with HgI2 detectors at room temperature in the low energy x-ray region down to 2 keV are reported. The best resolution obtained is 548 e V for 5.9 keV x-rays, and the 2.01 keV phosphorous x-ray line has been resolved with a detector with an area of 14 mm2. The different noise sources of the detector-amplifier system are analysed and polarization effects in the detectors are discussed. The mercuric iodide crystals were grown from the vapour phase by gradient reversal techniques.Keywords
This publication has 21 references indexed in Scilit:
- n-type CdTe semiconductor detectors as X- and low-energy gamma-ray room-temperature spectrometersNuclear Instruments and Methods, 1975
- Properties of Vapour Phase Grown Mercuric Iodide Single Crystal DetectorsIEEE Transactions on Nuclear Science, 1975
- Prognosis for High-Z Semiconductor DetectorsIEEE Transactions on Nuclear Science, 1975
- Purification, growth, and characterization of alpha mercuric-iodide crystals for gamma-ray detectionJournal of Crystal Growth, 1974
- Preliminary Studies of Charge Carrier Transport in Mercuric Iodide Radiation DetectorsIEEE Transactions on Nuclear Science, 1974
- Carrier Trapping in Ge(Li) DetectorsIEEE Transactions on Nuclear Science, 1971
- Preamplifier Noise Effects on Spectrometer Energy ResolutionIEEE Transactions on Nuclear Science, 1971
- Fano Factor Fact and FallacyIEEE Transactions on Nuclear Science, 1970
- Trapping Effects in Ge(Li) Detectors and Search for a Correlation with Characteristics Measured on the P-Type CrystalsIEEE Transactions on Nuclear Science, 1970
- Noise, Trapping and Energy Resolution in Semiconductor Gamma-Ray SpectrometersIEEE Transactions on Nuclear Science, 1967