Electron transfer between regions with different confining potentials

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Abstract
A practical numerical method is presented for obtaining the scattering matrix for an electron at a junction between two regions having different confining potentials in the transverse direction. The scattering matrix should find general use in models describing electron transport in semiconductor microstructures whenever changes in channel dimensions or structure are important. As an illustrative example, the method is applied to electron transfer from a narrow channel into a wide contact including the effects of the contact potential.