Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

3 December 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (25) , 1346-1348
https://doi.org/10.1049/el:19870930

Abstract

We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Ga_o.47In_o.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1μm-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyf_T of 19 GHz.

Keywords

PLASMA ETCHING
HEMT
1 MICRON
MODFET
LANGMUIR-BLODGETT FILM DEPOSITION
MODULATION-DOPED FIELD-EFFECT TRANSISTORS
N-GA0.47IN0.53AS
HIGH-BARRIER-HEIGHT SCHOTTKY BARRIER
INP-GAINAS
CUTOFF FREQUENCY
EXTRINSIC TRANSCONDUCTANCE
CADMIUM DISTEARATE
19 GHZ
GATE ELECTRODE
SEMICONDUCTORS

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