Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants: Problems and solutions
- 1 January 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (1) , 298-301
- https://doi.org/10.1116/1.589798
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Secondary ion mass spectroscopy resolution with ultra-low beam energiesJournal of Vacuum Science & Technology A, 1996
- Low Energy Ion Implantation of as During Si-MBEMRS Proceedings, 1995
- Determination of phosphorus distribution in the silicon dioxide/silicon layer system by secondary ion mass spectrometryAnalytical Chemistry, 1988