Effect of Insulator Surface on Selective Deposition of CVD Tungsten Films

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Abstract
Tungsten films have been selectively deposited on exposed silicon surfaces using different insulators important in IC technology to inhibit nucleation on the surrounding regions. A quantitative comparison of the nucleation rates on different surfaces was obtained. Nuclei form more readily on nitrogen‐containing films than on silicon‐dioxide films. The presence of phosphorus on the surface tends to inhibit nucleation either when the phosphorus is added by a surface treatment after the insulator is formed or when it is incorporated during deposition of the insulator; however, the inhibiting effect appears to be greater in the latter case. These results show that proper choice of an insulator and its surface preparation immediately before tungsten deposition permit thicker selective tungsten layers to be formed without nucleation on the surrounding insulator surfaces.

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