Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 350
- https://doi.org/10.1016/0022-0248(91)90483-l
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Growth of AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alaneJournal of Crystal Growth, 1990
- MOVPE growth of AlGaAs using trimethylamine alaneJournal of Crystal Growth, 1990
- Growth of AlxGa1-xAs by MOVPE using alternative alkylaluminium precursorsJournal of Crystal Growth, 1990
- The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructuresJournal of Crystal Growth, 1986