The ballistic nano-transistor
- 22 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- The silicon MOSFET from a transmission viewpointSuperlattices and Microstructures, 1998
- On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentrationIEEE Transactions on Electron Devices, 1994