Junction mechanisms in CdS/CdTe solar cells
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 957-960
- https://doi.org/10.1109/pvsc.1996.564288
Abstract
Shockley-Read-Hall (SRH) recombination theory has been used to describe the performance of CdTe solar cells. The recombination center profile dominates performance and is found to vary significantly among devices with nominally the same efficiency. For most devices the profile results in a voltage dependent diode factor rather than a single A,J/sub 0/ pair that can describe performance. The observed narrow range for V/sub oc/ of 0.83-0.85 volts for high efficiency devices is attributed to two effects: the containment of the recombination centers between the imrefs and a proposed correlation between V/sub bi/ and the recombination center density.Keywords
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