Modeling of High‐Dose Ion Implantation‐Induced Dopant Transient Diffusion, and Dopant Transient Activation in Silicon (Boron and Arsenic Diffusion)
- 1 November 1992
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 139 (11) , 3275-3284
- https://doi.org/10.1149/1.2069067
Abstract
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