Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency
- 23 April 2012
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (17) , 173109
- https://doi.org/10.1063/1.4707377
Abstract
Of interest for both photovoltaic and photodetector applications is the ability of colloidal quantum dot (CQD) devices to provide response further into the infrared than is typical for other solution-processable materials. Here, we present a simple heterojunction diode structure that utilizes the extended infrared absorption of PbS CQDs. We show that device performance benefits from a discontinuous exciton blocking layer which improves charge separation without limiting charge extraction. By enhancing charge carrier mobility in the CQD layer, we demonstrate a planar heterostructure device with a power conversion efficiency of 5.2% under 1 sun illumination.Keywords
This publication has 30 references indexed in Scilit:
- Colloidal Quantum Dot Photovoltaics: A Path ForwardACS Nano, 2011
- Depleted Bulk Heterojunction Colloidal Quantum Dot PhotovoltaicsAdvanced Materials, 2011
- Charge‐Separation Dynamics in Inorganic–Organic Ternary Blends for Efficient Infrared PhotodiodesAdvanced Functional Materials, 2011
- PbS nanocrystal solar cells with high efficiency and fill factorApplied Physics Letters, 2010
- Stability Assessment on a 3% Bilayer PbS/ZnO Quantum Dot Heterojunction Solar CellAdvanced Materials, 2010
- Colloidal PbS Quantum Dot Solar Cells with High Fill FactorACS Nano, 2010
- Depleted-Heterojunction Colloidal Quantum Dot Solar CellsACS Nano, 2010
- The fabrication and analysis of a PbS nanocrystal:C60bilayer hybrid photovoltaic systemNanotechnology, 2009
- Solution-processed PbS quantum dot infrared photodetectors and photovoltaicsNature Materials, 2005
- Photoconduction in porous TiO2 sensitized by PbS quantum dotsApplied Physics Letters, 1995