WxN1−x alloys as diffusion barriers between Al and Si
- 1 September 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (5) , 2787-2789
- https://doi.org/10.1063/1.341579
Abstract
Reactively sputtered tungsten nitride (WxN1−x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n+ ‐p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n+ ‐p diodes for 30‐min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into 〈Si〉 through the WxN1−x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.This publication has 6 references indexed in Scilit:
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