High-T 0 low-threshold crescent InGaAsP mesa-substrate buried-heterojunction lasers

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Abstract
A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (λ = 1.3 μm) was grown by a single-step liquid phase epitaxy. Threshold current as low as 25 mA with 200 μm cavity length under pulse operation and linear light/current characteristics up to five times Ith were obtained. T0 as high as 97°C was achieved for the first time for quaternary lasers. High output power, ∼15 mW/facet, has been realised.