Reactions of laser-generated CF2 on silicon and silicon oxide surfaces
- 1 January 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 207 (2-3) , 344-353
- https://doi.org/10.1016/0039-6028(89)90127-1
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Reactions of XeF2 with thermally grown SiO2Surface Science, 1988
- Chemisorption of fluorocarbon free radicals on silicon and SiO2The Journal of Chemical Physics, 1988
- Excimer laser-assisted etching of polysilicon at 193 nmJournal of Materials Research, 1987
- Silicon etching mechanisms in a CF4/H2 glow dischargeJournal of Applied Physics, 1987
- Laser-induced fluorescence measurement and analytical model for the reaction probability of CF2 on SiJournal of Applied Physics, 1986
- Glass etching initiated by excimer laser photolysis of dibromodifluoromethaneThe Journal of Physical Chemistry, 1986
- Chemisorption of laser-generated fluorocarbon free radicals on single crystal siliconThe Journal of Chemical Physics, 1985
- Photodissociation of dibromodifluoromethane at 248 nm by the molecular beam methodThe Journal of Physical Chemistry, 1984
- Basic chemistry and mechanisms of plasma etchingJournal of Vacuum Science & Technology B, 1983
- Excimer laser photolysis in CBr4 and CF2Br2: Luminescence from Br2, Br, CF2, and C2Chemical Physics Letters, 1979