Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

The memory effect of a trilayer structure (rapid thermal oxide/Ge nanocrystals in ${\mathrm{SiO}}_2/\mathrm{sputtered}$ ${\mathrm{SiO}}_2)$ was investigated via capacitance versus voltage $\mathrm{(C–V)}$ measurements. The Ge nanocrystals were synthesized by rapid thermal annealing of the cosputtered $\mathrm{Ge}+{\mathrm{SiO}}_2$ films. The memory effect was manifested by the hysteresis in the $\mathrm{C–V}$ curve. Transmission electron microscope and $\mathrm{C–V}$ results indicated that the hysteresis was due to Ge nanocrystals in the middle layer of the trilayer structure.