In situ-doped epitaxial silicon film growth at 250 degrees C by an ultra-clean low-energy bias sputtering
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 53-56
- https://doi.org/10.1109/iedm.1989.74226
Abstract
The use of ultraclean technology to produce a dramatic reduction in the processing temperature has been demonstrated for silicon epitaxy by low-energy bias sputtering. Damage-free in situ substrate surface cleaning by extremely low-energy Ar ion bombardment has been used for preparing an ultraclean wafer surface before film deposition. Concurrent bombardment of a growing film surface by low-energy Ar ions with precisely controlled energy and flux has been utilized to activate the film surface. As a result, in situ doped epitaxial silicon films with high crystal perfection have been successfully grown at temperatures as low as 250 degrees C. Perfect process-parameter control and the realization of an ultraclean processing environment and ultraclean wafer surfaces have been verified to be key factors that enable such a low-temperature high-performance process.<>Keywords
This publication has 5 references indexed in Scilit:
- Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle processApplied Physics Letters, 1989
- Low-temperature silicon epitaxy by low-energy bias sputteringApplied Physics Letters, 1988
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Heavily Arsenic‐Doped Silicon Epitaxial Films Grown by Partially Ionized MBEJournal of the Electrochemical Society, 1986