Channeling dependence of ion-beam-induced epitaxial recrystallization in silicon
- 1 March 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (5) , 1513-1517
- https://doi.org/10.1063/1.336457
Abstract
Buried amorphous layers in silicon, formed by self-ion-implantation, have been regrown using 300-keV neon and nitrogen ion beams in the temperature range 200–400 °C. When the beams were aligned with the 〈100〉 axis in the crystal, the regrowth rate at the shallower amorphous/crystalline interface was reduced, while the deeper regrowth front proceeded with the same rate as that for a random beam direction. The observed channeling effect is attributed to a decreased nuclear energy deposition for the channeled ions, which suggests that the annealing mechanism involves point-defect migration in the crystalline material.This publication has 8 references indexed in Scilit:
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