Chemically amplified deep ultraviolet resist for positive tone ion exposure
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 2355-2357
- https://doi.org/10.1116/1.589645
Abstract
The positive tone deep ultraviolet resist UV II HS-0.6 (Shipley) has been evaluated for ion exposure in the ion projector at the Fraunhofer Institute in Berlin. The chemically amplified resist showed extremely high sensitivity of 1×1012 H+ ions/cm2 at an ion energy of 75 keV. The contrast number was 11. Smallest lines with 65 nm linewidth could be delineated in 140-nm-high resist. At higher resist thickness of 370 nm, lines down to 70 nm were stable showing aspect ratios of >4. The exposure latitude at 100 nm nominal linewidth was ±10% dose variation for a ±10% linewidth change.Keywords
This publication has 3 references indexed in Scilit:
- HPR 506 photoresist used as a positive tone ion resistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Correlation of UVIIHS resist chemistry to dissolution rate measurementsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)Published by SPIE-Intl Soc Optical Eng ,1996