Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning

8 April 1996

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (15) , 2141-2143
https://doi.org/10.1063/1.115611

Abstract

The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO₂ interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO₂ interface states.

Keywords

SILICON CARBIDES
SILICON OXIDES
INTERFACE STATES
SURFACE CLEANING
ELECTRONIC STRUCTURE
CRYSTAL DEFECTS

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