Wideband monolithic GaAs amplifier using cascodes
- 27 August 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (18) , 951-952
- https://doi.org/10.1049/el:19870669
Abstract
A monolithic matched, two-stage wideband amplifier with an insertion gain of 26dB and a — 3dB bandwidth of 3-2GHz is reported. Optimally designed cascode circuits are used to enhance the gain-bandwidth product available per stage. The IC has been fabricated in a Iμ depletion GaAs MESFET technology.Keywords
This publication has 0 references indexed in Scilit: