Rapid Degradation in Double-Heterostructure Lasers. II. Semiquantitative Analyses on the Propagation of Dark Line Defects

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Abstract
It was observed that the degradation speed of the DH semiconductor laser changed drastically with the driving current density. Analyses were made on the temperature rise and the stresses in the vicinity of dislocations. The speed of the propagation of dark line defects and its dependence on the excitation energy density are well explained in the light of a new model of gliding screw dislocations, in combination with the analysed values for the temperature rise and the thermal stress.