Ge on Bi2Sr2−xCa1+xCu2O8+y: Reduced reactivity through cluster assembly
- 13 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (7) , 718-720
- https://doi.org/10.1063/1.104287
Abstract
Photoemission studies of low‐temperature deposition of ∼30‐Å‐diam Ge clusters on single‐crystal Bi2 Sr2−x Ca1+x Cu2 O8+y (100) show that an interface is produced with no evidence of substrate disruption. Analysis of the superconductor core level emission as a function of coverage indicates uniform overlayer growth and complete surface coverage. These cluster‐assembled interfaces were stable when warmed to 300 K, with only a slight reduction of Cu 2p3/2 satellite emission characteristic of the superconductor. In contrast, conventional atom‐by‐atom Ge deposition produces a Ge oxide layer and surface disruption.Keywords
This publication has 9 references indexed in Scilit:
- Atom- and cluster-assembled interfaces: Cr growth onPhysical Review B, 1990
- Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctionsPhysical Review B, 1990
- Crystal growth and anisotropic properties of high-Tcoxide superconductorsPhase Transitions, 1989
- Single-crystal YBa2Cu3O7−x and Bi2Ca1+xSr2−xCu2O8+y surfaces and Ag adatom-induced modificationJournal of Applied Physics, 1989
- Superconductor-substrate interactions of the Y–Ba–Cu oxideJournal of Materials Research, 1989
- Large Anisotropy of the Upper Critical Magnetic Field in Single Crystal Bi-(Sr, Ca)-Cu-OJapanese Journal of Applied Physics, 1988
- Interface formation of semiconductors with high- superconductors:Physical Review B, 1988
- Electron escape depths in germaniumSurface Science, 1981
- Chemical shifts in photo–excited Auger spectraProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1974