On the variation of cut-off frequency at high injection level with emitter end concentration of a diffused base transistor
- 31 October 1974
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (10) , 1108-1110
- https://doi.org/10.1016/0038-1101(74)90153-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- On the variation of cut-off frequency with emitter end concentration of a diffused base transistorSolid-State Electronics, 1973
- Cut-off frequency of a drift transistorSolid-State Electronics, 1967
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- The high-injection-level operation of drift transistorsSolid-State Electronics, 1961
- Determination of physical parameters of diffusion and drift transistorsIRE Transactions on Electron Devices, 1961
- The Characteristic Frequencies of a Drift Transistor†Journal of Electronics and Control, 1959