Direct Observation of Optically Injected Spin-Polarized Currents in Semiconductors
Top Cited Papers
- 30 May 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 90 (21) , 216601
- https://doi.org/10.1103/physrevlett.90.216601
Abstract
Quantum interference of one- and two-photon excitation of unbiased semiconductors yields ballistic currents of carriers. The magnitudes and directions of the currents and the spin orientations of the carriers are controlled by the polarization and relative phase of the exciting femtosecond laser fields. We provide direct experimental evidence for the spin polarization of the optically injected spin currents by detecting a phase-dependent spatial shift of the circularly polarized photoluminescence in cubic ZnSe.Keywords
This publication has 12 references indexed in Scilit:
- Optical Orientation and Femtosecond Relaxation of Spin-Polarized Holes in GaAsPhysical Review Letters, 2002
- Coherent control of an optically injected ballistic spin-polarized current in bulk GaAsJournal of Applied Physics, 2002
- Conversion of Spin into Directed Electric Current in Quantum WellsPhysical Review Letters, 2001
- Optically Injected Spin Currents in SemiconductorsPhysical Review Letters, 2000
- Spin relaxation and spin-dependent exciton interactions in ZnSe quantum wellsJournal of Crystal Growth, 2000
- Relation between spin and momentum relaxation in ZnSe/ZnMgSSe quantum wellsPhysica B: Condensed Matter, 1999
- Electron Spin and Optical Coherence in SemiconductorsPhysics Today, 1999
- Observation of Coherently Controlled Photocurrent in Unbiased, Bulk GaAsPhysical Review Letters, 1997
- Temperature dependence of the direct gaps of ZnSe andSePhysical Review B, 1996
- Coherent Control of Photocurrent Generation in Bulk SemiconductorsPhysical Review Letters, 1996